Realizing Efficient Volume Depletion in SOI Junctionless FETs

MOBILITY MODELING IN SOI FETS FOR DIFFERENT SUBSTRATE ORIENTATIONS AND STRAIN CONDITIONS SHORT TITLE: MOBILITY MODELING IN SOI FETs

Conduction band modification due to shear stress is investigated. Mobility in singleand double-gate SOI FETs is modeled for Silicon thin body orientation (001) and (110) under general stress conditions. Decrease of conductivity mass induced by uniaxial [110] tensile stress leads to mobility enhancement in the stress direction in ultra-thin body SOI MOSFETs.

Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs

An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...

An Analytical Subthreshold Current/swing Model for Junctionless Cylindrical Nanowire Fets

Based on the parabolic potential approach (PPA), scaling theory, and driftdiffusion approach (DDA) with effective band gap widening (BGW), we propose an analytical subthreshold current/swing model for junctionless (JL) cylindrical nanowire FETs (JLCNFETs). The work indicates that the electron density of Qm that is induced by the current factor minimum central potentialc,minand equivalen...

Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions

Realizing efficient outcomes in cost spanning problems∗†

We propose a simple non-cooperative mechanism of network formation in cost spanning tree problems. The only subgame equilibrium payoff is efficient. Moreover, we extend the result to the case of budget restrictions. The equilibrium payoff can them be easily adapted to the framework of Steiner trees.